منابع مشابه
An intermediate phase in GexSe1−x glasses: experiment and simulation
The pair correlation function for GexSe1−x alloys near the intermediate phase (IP) is reported. First-principles MD models of these alloys show a ‘selforganized’ phase associated with the number of Ge bonds with twofold Se atoms. This probably represents the IP of Boolchand. The self-organization involves maintaining a nearly constant number of twofold Se atoms bonded to one Ge atom through a r...
متن کاملMacroscopic phase separation of Se-rich (x < 1/3) ternary Agy(GexSe1−x)1−y glasses
Temperature modulated differential scanning calorimetry measurements on Agy(GexSe1−x )1−y glasses provide evidence for bimodal glass transition temperatures in Se-rich glasses (x < 1/3). At x = 0.20 and 0.25, thermal measurements performed as a function of Ag content in the 0 y 0.25 range reveal that the additive (Ag) segregates into an Ag2Se-rich glass phase, possessing a characteristic glass ...
متن کاملSelector Devices for High Density Cross-point ReRAM
ReRAM has been considered as a promising candidate to overcome scaling limits of the conventional FLASH memory due to its superior performance. To realize the high density memory, 3D cross-point array or vertical ReRAM are necessary [1]. To integrate cross-point (4F) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected d...
متن کاملIntermediate Phase in GexSe1−x Glasses: A Joint Theoretical and Experimental Study
Raman and calorimetric studies on GexSe1−x glasses have provided evidence for the existence of the intermediate phase (IP) in chalcogenide and other glasses. Ab initio molecular dynamics models of these glasses are discussed, and an atomistic picture of the IP, based upon the models and available experiments is presented. Analysis of our models reveals that the IP in GexSe1−x glasses appears du...
متن کاملSilver transport in GexSe1−x :Ag materials: Ab initio simulation of a solid electrolyte
In this paper, we present models of Ge-Se glasses heavily doped with Ag obtained from ab initio simulation and study the dynamics of the network with an emphasis on the motion of Ag+ ions. The models are analyzed with partial pair correlation functions, static structure factors, and novel wavelet techniques. The electronic properties are characterized by the electronic density of states and ana...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2019
ISSN: 0167-9317
DOI: 10.1016/j.mee.2019.110990